制造商 | 部件名 | 数据表 | 功能描述 |
Sanyo Semicon Device |
LC374100SM
|
64Kb / 4P |
4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
LE28CV1001M
|
276Kb / 14P |
1MEG (131072 words x 8 bits) Flash Memory
|
LE28C1001M
|
281Kb / 14P |
1MEG (131072 words x 8 bits) Flash Memory
|
LC361000AMLL
|
158Kb / 8P |
1 MEG (131072 words X 8 bits) SRAM
|
Samsung semiconductor |
K9K8G08U1M
|
1Mb / 41P |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Texas Instruments |
TMS29F040
|
482Kb / 37P |
[Old version datasheet] 524288 BY 8-BIT FLASH MEMORY
|
Samsung semiconductor |
K9T1G08U0M
|
888Kb / 38P |
128M x 8 Bits NAND Flash Memory
|
K9E2G08U0M
|
888Kb / 38P |
256M x 8 Bits NAND Flash Memory
|
Sanyo Semicon Device |
LE28FV4001M
|
230Kb / 14P |
4MEG (52488 x 8 Bits) Flash Memory
|
LC378100QM
|
64Kb / 4P |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|