制造商 | 部件名 | 数据表 | 功能描述 |
Motorola, Inc |
MTD2N50
|
168Kb / 5P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
|
MTD6N10
|
167Kb / 5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
|
MTD3055EL
|
380Kb / 6P |
TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)
|
New Jersey Semi-Conduct... |
MTP25N05E
|
100Kb / 2P |
TMOS IV Power Field Effect Transistor
|
MTP20N10E
|
101Kb / 2P |
TMOS IV Power Field Effect Transistor
|
ON Semiconductor |
MTD10N10EL
|
93Kb / 8P |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
March, 2004 ??Rev. 1 |
MTD10N10EL
|
79Kb / 7P |
TMOS E?묯ET Power Field Effect Transistor DPAK for Surface Mount
June, 2006 ??Rev. 3 |
New Jersey Semi-Conduct... |
MTM60N06
|
95Kb / 2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc |
MTH8N40
|
385Kb / 5P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
IRF530
|
157Kb / 2P |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|